PART |
Description |
Maker |
330SS004C16 330LS004C16 330HS003B16 330FS003G16 33 |
Pipe Thread Adapter Direct Coupling
|
Glenair, Inc.
|
K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYR1612820 HYR183220G-840 HYR1612820G-653 HYR18642 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) 直接的RDRAM RIMM的模块(44兆RDRAMs CONN HEADER .100 DUAL STR 72POS CONN HEADER .100 DUAL R/A 72POS 128M X 16 DIRECT RAMBUS DRAM MODULE, 2.06 ns, DMA184
|
INFINEON[Infineon Technologies AG]
|
MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184 Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
SL6649-1 SL6649-KG SL6649-I SL6649-MPEF SL6649-MPE |
200MHz Direct Conversion Downstream Keying (DSK) Data Receiver 200MHz DIRECT CONVERSION FSK DATA RECEIVER 200MHz的直接转换接收FSK数据
|
Zarlink Semiconductor Inc. Zarlink Semiconductor, Inc.
|
MC-4R64FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 32M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA160
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
947-292ZL8-55PZ 947-292ZL8-55PY 947-292ZL8-55SZ 94 |
Bayonet Coupling Jam Nut Mount
|
Glenair, Inc. http://
|
230-029FT8-3PW 230-029FT8-3PX 230-029ZL22-3PW 230- |
Threaded Coupling Jam-Nut Mount Receptacle
|
Glenair, Inc. http://
|
KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|